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TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 18V *Same as SOT-89. RDS(ON) (max) 2.5 ID(ON) (min) 250mA VGS(th) (max) 1.0V Order Number /Package TO-243AA* Die TN2501N8 TN2501ND Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA: Features Low threshold High input impedance Low input capacitance -- 110pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage TN5U Where = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* *Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 15V -55C to +150C 300C G D S D TO-243AA (SOT-89) Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2501 Thermal Characteristics Package TO-243AA * ID (continuous)* 400mA ID (pulsed) 560mA Power Dissipation @ TA = 25C 1.6W jc ja IDR* 560mA IDRM 750mA C/W 15 C/W 78 Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. D ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 18 0.3 1.0 -4.0 100 10 1.0 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance 250 600 25 3.5 2.5 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 1.1 100 0.15 0.3 110 60 35 5.0 15 15 8.0 1.8 V ns ns VDD = 15V, ID = 250mA, RGEN = 25 VGS = 0V, ISD = 200mA VGS = 0V, ISD = 200mA pF VGS = 0V, VDS = 15V f = 1 MHz 0.75 %/C Typ Max Unit V V mV/C nA A mA mA Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID= 1.0mA VGS = VDS, ID= 1.0mA VGS = 15V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = VDS = 3.0V VGS = 1.2V, ID = 3.0mA VGS = 2.0V, ID = 50mA VGS = 3.0V, ID = 200mA VGS = 3.0V, ID = 200mA VDS = 3.0V, ID = 200mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300sec pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD RL OUTPUT D.U.T. TN2501 Typical Performance Curves 5 4 Output Characteristics VGS = 10V 8V 1.0 0.8 Saturation Characteristics ID (amperes) 2 1 0 6V ID (amperes) 3 0.6 0.4 0.2 0 VGS = 4V 3V 2V 1V 0 2 4 6 8 10 4V 3V 0 10 20 VDS (volts) Transconductance vs. Drain Current VDS = 3V VDS (volts) 1.0 2.0 Power Dissipation vs. Ambient Temperature TO-243AA GFS (siemens) PD (watts) T A = -55C 0.5 25C 125C 1.0 0 0 0.2 0.6 0.4 ID (amperes) 0.8 1.0 0 0 25 50 TA (C) 75 100 125 150 10 Maximum Rated Safe Operating Area 1.0 Thermal Response Characteristics Thermal Resistance (normalized) 0.8 0.6 0.4 0.2 0 0.001 TO-243AA T A = 25C P D = 1.6W 0.01 0.1 1 10 T A = 25C 1.0 TO-243AA(pulsed) ID (amperes) 0.1 TO-243AA (DC) 0.01 0.1 1.0 VDS (volts) 10 100 tp (seconds) 3 TN2501 Typical Performance Curves BVDSS Variation with Temperature 1.1 10 On-Resistance vs. ID 8 BVDSS (normalized) VGS = 2V RDS(ON) (ohms) 6 VGS = 3V 4 1.0 2 0.9 -50 0 50 100 150 0 0 0.2 0.4 0.6 0.8 1.0 Tj (C) Transfer Characteristics 1.0 ID (amperes) V(th) and RDS Variation with Temperature 1.6 1.4 25C VDS = 15V 0.8 RDS(ON) @ 3V, 0.2A 1.4 VGS(th) (normalized) 1.2 ID (amperes) 0.6 V(th) @ 1mA 1.0 1.2 TA = -55C 0.4 125C 1.0 0.8 0.8 0.6 0.2 0 0 2 4 6 8 10 -50 0 50 100 150 0.6 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V C (picofarads) CISS VGS (volts) 6 130 pF VDS = 15V 4 50 COSS 25 2 CRSS 60pF 0 0 5 10 15 20 0 0 0.4 0.8 1.2 1.6 2.0 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) |
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